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    2003 Aug 20 3 NXP Semiconductors Product data sheet Very low VF MEGA Schottky barrier rectifiers PMEG2005AEV; PMEG3005AEV; PMEG4005AEV LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Refer to SOT666 standard mounting conditions. 2. Only valid if pins 3 and 4 are connected in parallel. 3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses (PR) are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. THERMAL CHARACTERISTICS Notes 1. Refer to SOT666 standard mounting conditions. 2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses P R and IF(AV) rating will be av ailable on request. 3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm. 4. Solder point of cathode tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage PMEG2005AEV ? 20 V PMEG3005AEV ? 30 V PMEG4005AEV ? 40 V IF continuous forward current note 1 ? 0.5 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 ? 3.5 A IFSM non-repetitive peak forward current tp = 8 ms; square wave; note 2 ? 10 A Tj junction temperature note 3 ? 150 °C Tamb operating ambient temperature note 3 ?65 +150 °C Tstg storage temperature ?65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; notes 1 and 2 405 K/W in free air; notes 2 and 3 215 K/W Rth j-s thermal resistance from junction to soldering point note 4 80 K/W |